“STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF BORON DOPED MONOLAYER GALLIUM ARSENIDE (GaAs) FOR OPTOELECTRONIC APPLICATION: A DFT STUDY”. FUDMA JOURNAL OF SCIENCES 9, no. 5 (May 31, 2025): 187–195. Accessed September 17, 2025. http://162.254.38.185/index.php/fjs/article/view/3560.